| PART |
Description |
Maker |
| INK0001AX08 INK0001AC1 INK0001AM1 INK0001AU1 INK00 |
High speed switching Silicon N-channel MOSFET
|
Isahaya Electronics Corporation
|
| INK0010AC1 INK0010AM1 INK0010AT2 INK0010AU1 INK001 |
High speed switching Silicon N-channel MOSFET
|
Isahaya Electronics Corporation
|
| CMLDM8002A CMLDM8002AJ |
SURFACE MOUNT PICOmini DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET 0.28 mA, 50 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Central Semiconductor, Corp.
|
| RJM0306JSP-00-J0 RJM0306JSP10 |
Silicon N / P Channel Power MOS FET High Speed Power Switching
3.5 A, 30 V, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, SOP-8
|
Renesas Electronics Corporation
|
| BF999 Q62702-F1132 |
Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz/ preferably in FM applications)
From old datasheet system
Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| NTE2935 NTE2933 |
30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET
MOSFET N-Channel, Enhancement Mode High Speed Switch
|
NTE[NTE Electronics]
|
| CPH6312 |
P-Channel Silicon MOSFET High-Speed Switching Applications
|
Sanyo Semicon Device
Sanyo Electric Co.,Ltd.
|
| HS56021 HS56021TZ-E |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation
|
| CPH6315 |
P-Channel Silicon MOSFET High-Speed Switching Applications
|
Sanyo Semicon Device
|
| RJL6013DPP RJL6013DPP-00-T2 |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SK512 |
SILICON C-CHANNEL MOSFET HIGH SPEED POWER SWITCHING
|
List of Unclassifed Manufacturers
Hitachi Semiconductor
ETC
|
